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IXFA12N50P

IXFA12N50P IXYS

IXF_12N50P.pdf Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 277 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
16+4.68 EUR
18+ 4.2 EUR
22+ 3.35 EUR
23+ 3.17 EUR
Mindestbestellmenge: 16
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Technische Details IXFA12N50P IXYS

Description: MOSFET N-CH 500V 12A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1mA, Supplier Device Package: TO-263AA (IXFA), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V.

Weitere Produktangebote IXFA12N50P nach Preis ab 3.17 EUR bis 10.01 EUR

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IXFA12N50P IXFA12N50P Hersteller : IXYS IXF_12N50P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
16+4.68 EUR
18+ 4.2 EUR
22+ 3.35 EUR
23+ 3.17 EUR
Mindestbestellmenge: 16
IXFA12N50P IXFA12N50P Hersteller : IXYS media-3321540.pdf MOSFET 500V 12A
auf Bestellung 623 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+10.01 EUR
10+ 8.42 EUR
50+ 7.15 EUR
100+ 6.24 EUR
250+ 6.06 EUR
500+ 5.67 EUR
1000+ 5.25 EUR
Mindestbestellmenge: 6
IXFA12N50P IXFA12N50P Hersteller : Littelfuse ete_mosfets_n-channel_hiperfets_ixf_12n50p_datasheet.pdf.pdf Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXFA12N50P IXFA12N50P Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_12n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Produkt ist nicht verfügbar