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IXFA12N50P

IXFA12N50P IXYS


media-3321540.pdf Hersteller: IXYS
MOSFETs 500V 12A
auf Bestellung 492 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.32 EUR
10+5.49 EUR
50+4.65 EUR
100+4.24 EUR
250+3.57 EUR
500+3.56 EUR
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Technische Details IXFA12N50P IXYS

Description: MOSFET N-CH 500V 12A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1mA, Supplier Device Package: TO-263AA (IXFA), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V.

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IXFA12N50P Hersteller : IXYS littelfuse-discrete-mosfets-ixf-12n50p-datasheet?assetguid=85deb97d-761a-4960-9e8d-233ab701f0e0 IXFA12N50P SMD N channel transistors
auf Bestellung 277 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+4.92 EUR
22+3.35 EUR
23+3.16 EUR
Mindestbestellmenge: 15
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IXFA12N50P IXFA12N50P Hersteller : Littelfuse ete_mosfets_n-channel_hiperfets_ixf_12n50p_datasheet.pdf.pdf Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
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IXFA12N50P IXFA12N50P Hersteller : IXYS littelfuse-discrete-mosfets-ixf-12n50p-datasheet?assetguid=85deb97d-761a-4960-9e8d-233ab701f0e0 Description: MOSFET N-CH 500V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH