auf Bestellung 492 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.28 EUR |
| 500+ | 4.19 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFA12N50P IXYS
Description: MOSFET N-CH 500V 12A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1mA, Supplier Device Package: TO-263AA (IXFA), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V.
Weitere Produktangebote IXFA12N50P nach Preis ab 3.19 EUR bis 4.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXFA12N50P | Hersteller : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO263 Mounting: SMD Kind of package: tube Drain current: 12A Drain-source voltage: 500V On-state resistance: 0.5Ω Reverse recovery time: 300ns Gate charge: 29nC Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 276 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||
|
|
IXFA12N50P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO263 Mounting: SMD Kind of package: tube Drain current: 12A Drain-source voltage: 500V On-state resistance: 0.5Ω Reverse recovery time: 300ns Gate charge: 29nC Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate-source voltage: ±30V |
auf Bestellung 276 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
IXFA12N50P | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
|||||||||||
 |
IXFA12N50P | Hersteller : IXYS |
Description: MOSFET N-CH 500V 12A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V |
Produkt ist nicht verfügbar |