
IXFA130N10T2 IXYS

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Drain-source voltage: 100V
Drain current: 130A
Case: TO263
Polarisation: unipolar
On-state resistance: 10.1mΩ
Power dissipation: 360W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 130nC
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
13+ | 5.83 EUR |
18+ | 4.03 EUR |
19+ | 3.80 EUR |
100+ | 3.78 EUR |
500+ | 3.66 EUR |
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Technische Details IXFA130N10T2 IXYS
Description: MOSFET N-CH 100V 130A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 65A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-263AA (IXFA), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V.
Weitere Produktangebote IXFA130N10T2 nach Preis ab 3.80 EUR bis 9.17 EUR
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IXFA130N10T2 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263 Drain-source voltage: 100V Drain current: 130A Case: TO263 Polarisation: unipolar On-state resistance: 10.1mΩ Power dissipation: 360W Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 130nC Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA130N10T2 | Hersteller : IXYS |
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auf Bestellung 138 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA130N10T2 | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 65A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V |
auf Bestellung 251 Stücke: Lieferzeit 10-14 Tag (e) |
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