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IXFA14N85XHV

IXFA14N85XHV IXYS


littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_14n85x_datasheet.pdf.pdf Hersteller: IXYS
Description: MOSFET N-CH 850V 14A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-263 (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 25 V
auf Bestellung 1650 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
300+6.9 EUR
Mindestbestellmenge: 300
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Technische Details IXFA14N85XHV IXYS

Description: MOSFET N-CH 850V 14A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V, Power Dissipation (Max): 460W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1mA, Supplier Device Package: TO-263 (IXFA), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 25 V.

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IXFA14N85XHV IXFA14N85XHV Hersteller : Littelfuse osfets_n-channel_ultra_junction_ixf_14n85x_datasheet.pdf.pdf Trans MOSFET N-CH 850V 14A 3-Pin(2+Tab) TO-263HV
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IXFA14N85XHV IXFA14N85XHV Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDFF759EEC3820&compId=IXFA(H%2CP)14N85X_HV.pdf?ci_sign=311d18c4704f893c40442fc3d7e538bb64ecd1fb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Mounting: SMD
Case: TO263HV
On-state resistance: 0.55Ω
Drain current: 14A
Power dissipation: 460W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 30nC
Reverse recovery time: 116ns
Anzahl je Verpackung: 1 Stücke
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IXFA14N85XHV IXFA14N85XHV Hersteller : IXYS media-3323688.pdf MOSFET MSFT N-CH ULTRA JNCT X3&44
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IXFA14N85XHV IXFA14N85XHV Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDFF759EEC3820&compId=IXFA(H%2CP)14N85X_HV.pdf?ci_sign=311d18c4704f893c40442fc3d7e538bb64ecd1fb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Mounting: SMD
Case: TO263HV
On-state resistance: 0.55Ω
Drain current: 14A
Power dissipation: 460W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 30nC
Reverse recovery time: 116ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH