IXFA16N50P-TRL IXYS
Hersteller: IXYS
Description: MOSFET N-CH 500V 16A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
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Technische Details IXFA16N50P-TRL IXYS
Description: MOSFET N-CH 500V 16A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 2.5mA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V.
Weitere Produktangebote IXFA16N50P-TRL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
IXFA16N50P-TRL | IXYS |
MOSFET IXFA16N50P TRL |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
IXFA16N50P-TRL | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 500V; 16A; 300W; D2PAK,TO263 Type of transistor: N-MOSFET Drain-source voltage: 500V Drain current: 16A Power dissipation: 300W Case: D2PAK; TO263 Gate-source voltage: 30V On-state resistance: 0.4Ω Mounting: SMD Gate charge: 36nC Kind of channel: enhancement Technology: HiPerFET™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXFA16N50P-TRL |
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Hersteller: IXYS
MOSFET IXFA16N50P TRL
MOSFET IXFA16N50P TRL
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFA16N50P-TRL |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 16A; 300W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Technology: HiPerFET™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 16A; 300W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Technology: HiPerFET™
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH



