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IXFA180N10T2

IXFA180N10T2 IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2855F843BCA1820&compId=IXFA(P)180N10T2.pdf?ci_sign=613033688ed8f73bb8407a0f31dc76dac86260fe Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Drain-source voltage: 100V
Drain current: 180A
Case: TO263
Polarisation: unipolar
On-state resistance: 6mΩ
Power dissipation: 480W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 185nC
Kind of channel: enhancement
Mounting: SMD
Reverse recovery time: 66ns
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 177 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.32 EUR
13+5.51 EUR
50+5.42 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXFA180N10T2 IXYS

Description: MOSFET N-CH 100V 180A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AA (IXFA), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V.

Weitere Produktangebote IXFA180N10T2 nach Preis ab 5.42 EUR bis 13.24 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFA180N10T2 IXFA180N10T2 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2855F843BCA1820&compId=IXFA(P)180N10T2.pdf?ci_sign=613033688ed8f73bb8407a0f31dc76dac86260fe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Drain-source voltage: 100V
Drain current: 180A
Case: TO263
Polarisation: unipolar
On-state resistance: 6mΩ
Power dissipation: 480W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 185nC
Kind of channel: enhancement
Mounting: SMD
Reverse recovery time: 66ns
Type of transistor: N-MOSFET
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.32 EUR
13+5.51 EUR
50+5.42 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IXFA180N10T2 IXFA180N10T2 Hersteller : IXYS media-3323852.pdf MOSFETs Trench T2 HiperFET Power MOSFET
auf Bestellung 1320 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.01 EUR
50+6.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFA180N10T2 IXFA180N10T2 Hersteller : Littelfuse Inc. IXF%28A%2CP%29180N10T2.pdf Description: MOSFET N-CH 100V 180A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.24 EUR
50+7.18 EUR
100+6.59 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFA180N10T2 IXFA180N10T2 Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK
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