auf Bestellung 294 Stücke:
Lieferzeit 325-329 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.81 EUR |
| 10+ | 6.56 EUR |
| 50+ | 6.20 EUR |
| 100+ | 5.30 EUR |
| 250+ | 5.02 EUR |
| 500+ | 4.72 EUR |
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Technische Details IXFA220N06T3 IXYS
Description: MOSFET N-CH 60V 220A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 220A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V, Power Dissipation (Max): 440W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V.
Weitere Produktangebote IXFA220N06T3
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IXFA220N06T3 Produktcode: 147921
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 Transistoren > MOSFET N-CH |
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IXFA220N06T3 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 220A Power dissipation: 440W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 136nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 38ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFA220N06T3 | Hersteller : IXYS |
Description: MOSFET N-CH 60V 220A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V Power Dissipation (Max): 440W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFA220N06T3 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 220A Power dissipation: 440W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 136nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 38ns |
Produkt ist nicht verfügbar |