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IXFA22N60P3

IXFA22N60P3 IXYS


IXFA(H,P,Q)22N60P3.pdf Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
12+6.28 EUR
13+ 5.65 EUR
16+ 4.63 EUR
17+ 4.38 EUR
Mindestbestellmenge: 12
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Technische Details IXFA22N60P3 IXYS

Description: MOSFET N-CH 600V 22A TO263AA, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 11A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 5V @ 1.5mA, Supplier Device Package: TO-263AA (IXFA), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V.

Weitere Produktangebote IXFA22N60P3 nach Preis ab 4.38 EUR bis 6.32 EUR

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IXFA22N60P3 IXFA22N60P3 Hersteller : IXYS IXFA(H,P,Q)22N60P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
12+6.28 EUR
13+ 5.65 EUR
16+ 4.63 EUR
17+ 4.38 EUR
Mindestbestellmenge: 12
IXFA22N60P3 IXFA22N60P3 Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_22n60p3_datasheet.pdf.pdf Description: MOSFET N-CH 600V 22A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 11A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
300+6.32 EUR
Mindestbestellmenge: 300
IXFA22N60P3 IXFA22N60P3 Hersteller : IXYS media-3320106.pdf MOSFET MOSFET DISCRETE
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