IXFA26N50P3 IXYS
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Drain-source voltage: 500V
Drain current: 26A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Gate charge: 42nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Drain-source voltage: 500V
Drain current: 26A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Gate charge: 42nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
Anzahl je Verpackung: 1 Stücke
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
11+ | 6.58 EUR |
13+ | 5.82 EUR |
14+ | 5.23 EUR |
15+ | 4.95 EUR |
50+ | 4.86 EUR |
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Technische Details IXFA26N50P3 IXYS
Description: MOSFET N-CH 500V 26A TO263, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-263AA (IXFA), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V.
Weitere Produktangebote IXFA26N50P3 nach Preis ab 4.86 EUR bis 6.58 EUR
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IXFA26N50P3 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263 Drain-source voltage: 500V Drain current: 26A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 500W Polarisation: unipolar Kind of package: tube Gate charge: 42nC Kind of channel: enhanced Mounting: SMD Case: TO263 |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA26N50P3 | Hersteller : IXYS |
Description: MOSFET N-CH 500V 26A TO263 Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFA26N50P3 | Hersteller : IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode |
Produkt ist nicht verfügbar |