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IXFA26N50P3

IXFA26N50P3 IXYS

pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Drain-source voltage: 500V
Drain current: 26A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Gate charge: 42nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
Anzahl je Verpackung: 1 Stücke
auf Bestellung 76 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
29+2.55 EUR
30+2.43 EUR
31+2.33 EUR
50+2.26 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXFA26N50P3 IXYS

Description: MOSFET N-CH 500V 26A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-263AA (IXFA), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V.

Weitere Produktangebote IXFA26N50P3 nach Preis ab 2.26 EUR bis 2.55 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFA26N50P3 IXFA26N50P3 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Drain-source voltage: 500V
Drain current: 26A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Gate charge: 42nC
Kind of channel: enhancement
Mounting: SMD
Case: TO263
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.55 EUR
30+2.43 EUR
31+2.33 EUR
50+2.26 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IXFA26N50P3 IXFA26N50P3 Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_26n50p3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 26A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
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IXFA26N50P3 IXFA26N50P3 Hersteller : IXYS media-3322528.pdf MOSFETs N-Channel: Power MOSFET w/Fast Diode
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