| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.28 EUR |
| 10+ | 8.04 EUR |
| 100+ | 7.39 EUR |
| 500+ | 6.66 EUR |
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Technische Details IXFA36N60X3 IXYS
Description: MOSFET ULTRA JCT 600V 36A TO263, Supplier Device Package: TO-263AA (IXFA), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Power Dissipation (Max): 446W (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V.
Weitere Produktangebote IXFA36N60X3 nach Preis ab 7.4 EUR bis 14.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXFA36N60X3 | IXYS |
 Description: MOSFET ULTRA JCT 600V 36A TO263Supplier Device Package: TO-263AA (IXFA) Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IXFA36N60X3 |
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Hersteller: IXYS
Description: MOSFET ULTRA JCT 600V 36A TO263
Supplier Device Package: TO-263AA (IXFA)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET ULTRA JCT 600V 36A TO263
Supplier Device Package: TO-263AA (IXFA)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.8 EUR |
| 50+ | 8.06 EUR |
| 100+ | 7.4 EUR |