
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 7.23 EUR |
10+ | 7.22 EUR |
50+ | 4.05 EUR |
100+ | 3.73 EUR |
1000+ | 3.48 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFA4N100P IXYS
Description: MOSFET N-CH 1000V 4A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263AA (IXFA), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 25 V.
Weitere Produktangebote IXFA4N100P nach Preis ab 3.22 EUR bis 7.34 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXFA4N100P | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 25 V |
auf Bestellung 595 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
![]() |
IXFA4N100P | Hersteller : Littelfuse |
![]() |
Produkt ist nicht verfügbar |
|||||||||||
IXFA4N100P | Hersteller : IXYS |
![]() |
Produkt ist nicht verfügbar |