| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.98 EUR |
| 10+ | 8.08 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFA4N85X IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W, Mounting: SMD, Pulsed drain current: 10A, Power dissipation: 150W, Gate charge: 7nC, Polarisation: unipolar, Technology: HiPerFET™; X-Class, Features of semiconductor devices: ultra junction x-class, Drain current: 3.5A, Kind of channel: enhancement, Drain-source voltage: 850V, Type of transistor: N-MOSFET, Gate-source voltage: ±30V, Kind of package: tube, Case: TO263, On-state resistance: 2.5Ω, Reverse recovery time: 170ns.
Weitere Produktangebote IXFA4N85X
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXFA4N85X | IXYS |
 MOSFET 850V/3.5A Ultra Junction X-Class HiPerFET Power MOSFET, TO-263 |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXFA4N85X | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W Mounting: SMD Pulsed drain current: 10A Power dissipation: 150W Gate charge: 7nC Polarisation: unipolar Technology: HiPerFET™; X-Class Features of semiconductor devices: ultra junction x-class Drain current: 3.5A Kind of channel: enhancement Drain-source voltage: 850V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO263 On-state resistance: 2.5Ω Reverse recovery time: 170ns |
auf Bestellung 92 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXFA4N85X |
|
Hersteller: IXYS
MOSFET 850V/3.5A Ultra Junction X-Class HiPerFET Power MOSFET, TO-263
MOSFET 850V/3.5A Ultra Junction X-Class HiPerFET Power MOSFET, TO-263
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| IXFA4N85X |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO263
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO263
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)