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Technische Details IXFA56N30X3 IXYS
Description: MOSFET N-CH 300V 56A TO263AA, Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263AA (IXFA), Vgs(th) (Max) @ Id: 4.5V @ 1.5mA, Power Dissipation (Max): 320W (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Weitere Produktangebote IXFA56N30X3 nach Preis ab 7.84 EUR bis 14.38 EUR
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IXFA56N30X3 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 300V 56A TO263AA Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263AA (IXFA) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
auf Bestellung 404 Stücke: Lieferzeit 10-14 Tag (e) |
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