auf Bestellung 193 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 15.63 EUR |
| 10+ | 9.63 EUR |
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Technische Details IXFA6N120P IXYS
Description: MOSFET N-CH 1200V 6A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-263AA (IXFA), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V.
Weitere Produktangebote IXFA6N120P nach Preis ab 7.96 EUR bis 15.93 EUR
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IXFA6N120P | Hersteller : IXYS |
 Description: MOSFET N-CH 1200V 6A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-263AA (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V |
auf Bestellung 4454 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA6N120P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 6A; 250W; TO263 Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 92nC Reverse recovery time: 300ns On-state resistance: 2.75Ω Drain current: 6A Gate-source voltage: ±30V Drain-source voltage: 1.2kV Power dissipation: 250W Case: TO263 Kind of channel: enhancement Mounting: SMD Technology: HiPerFET™; Polar™ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFA6N120P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 6A; 250W; TO263 Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 92nC Reverse recovery time: 300ns On-state resistance: 2.75Ω Drain current: 6A Gate-source voltage: ±30V Drain-source voltage: 1.2kV Power dissipation: 250W Case: TO263 Kind of channel: enhancement Mounting: SMD Technology: HiPerFET™; Polar™ |
Produkt ist nicht verfügbar |