IXFA7N100P IXYS SEMICONDUCTOR
Hersteller: IXYS SEMICONDUCTOR
Description: IXYS SEMICONDUCTOR - IXFA7N100P - Leistungs-MOSFET, n-Kanal, 1 kV, 7 A, 1.9 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 1kV
rohsCompliant: YES
Dauer-Drainstrom Id: 7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 6V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: Polar HiPerFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1.9ohm
SVHC: No SVHC (12-Jan-2017)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 15.9 EUR |
| 19+ | 12.67 EUR |
| 22+ | 9.77 EUR |
| 50+ | 7.84 EUR |
| 100+ | 7.6 EUR |
| 250+ | 7.34 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
16 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFA7N100P IXYS SEMICONDUCTOR
Description: IXYS SEMICONDUCTOR - IXFA7N100P - Leistungs-MOSFET, n-Kanal, 1 kV, 7 A, 1.9 ohm, TO-263 (D2PAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 1kV, rohsCompliant: YES, Dauer-Drainstrom Id: 7A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 6V, euEccn: NLR, Verlustleistung: 300W, Bauform - Transistor: TO-263 (D2PAK), Anzahl der Pins: 3Pin(s), Produktpalette: Polar HiPerFET, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 1.9ohm, SVHC: No SVHC (12-Jan-2017).
Weitere Produktangebote IXFA7N100P nach Preis ab 8.07 EUR bis 16.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXFA7N100P | IXYS |
Description: MOSFET N-CH 1000V 7A TO263 Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263AA (IXFA) Vgs(th) (Max) @ Id: 6V @ 1mA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
auf Bestellung 368 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA7N100P | IXYS |
MOSFETs 7 Amps 1000V |
auf Bestellung 153 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA7N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 7A Power dissipation: 300W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: SMD Gate charge: 47nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns |
auf Bestellung 132 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXFA7N100P |
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Hersteller: IXYS
Description: MOSFET N-CH 1000V 7A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA (IXFA)
Vgs(th) (Max) @ Id: 6V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: MOSFET N-CH 1000V 7A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA (IXFA)
Vgs(th) (Max) @ Id: 6V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 368 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.26 EUR |
| 10+ | 11.09 EUR |
| 50+ | 8.88 EUR |
| 100+ | 8.18 EUR |
| IXFA7N100P |
|
Hersteller: IXYS
MOSFETs 7 Amps 1000V
MOSFETs 7 Amps 1000V
auf Bestellung 153 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.34 EUR |
| 10+ | 8.95 EUR |
| 100+ | 8.19 EUR |
| 500+ | 8.07 EUR |
| IXFA7N100P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)