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Technische Details IXFA7N100P IXYS
Description: MOSFET N-CH 1000V 7A TO263, Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263AA (IXFA), Vgs(th) (Max) @ Id: 6V @ 1mA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Weitere Produktangebote IXFA7N100P nach Preis ab 5.89 EUR bis 11.04 EUR
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IXFA7N100P | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 1000V 7A TO263Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263AA (IXFA) Vgs(th) (Max) @ Id: 6V @ 1mA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
auf Bestellung 440 Stücke: Lieferzeit 10-14 Tag (e) |
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