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IXFA7N80P

IXFA7N80P IXYS


IXFA7N80P_IXFP7N80P.pdf Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
13+5.51 EUR
17+ 4.2 EUR
50+ 2.62 EUR
Mindestbestellmenge: 13
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Technische Details IXFA7N80P IXYS

Description: MOSFET N-CH 800V 7A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-263AA (IXFA), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V.

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IXFA7N80P IXFA7N80P Hersteller : IXYS IXFA7N80P_IXFP7N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
13+5.51 EUR
Mindestbestellmenge: 13
IXFA7N80P IXFA7N80P Hersteller : Littelfuse Inc. media?resourcetype=datasheets&itemid=B00D4E8D-827B-4A04-B106-292ED53206EE&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-7N80P-Datasheet.PDF Description: MOSFET N-CH 800V 7A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
auf Bestellung 1207 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.28 EUR
50+ 4.98 EUR
100+ 4.27 EUR
500+ 3.79 EUR
1000+ 3.25 EUR
Mindestbestellmenge: 3
IXFA7N80P IXFA7N80P Hersteller : Littelfuse rete_mosfets_n-channel_hiperfets_ixf_7n80p_datasheet.pdf.pdf Trans MOSFET N-CH 800V 7A 3-Pin(2+Tab) D2PAK
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IXFA7N80P IXFA7N80P Hersteller : IXYS media-3322436.pdf MOSFET 7 Amps 800V 1.44 Rds
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