| Anzahl | Preis |
|---|---|
| 1+ | 57.43 EUR |
| 10+ | 46.87 EUR |
| 100+ | 41.38 EUR |
| 500+ | 40.87 EUR |
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Technische Details IXFB100N50P IXYS
Description: MOSFET N-CH 500V 100A PLUS264, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PLUS264™, Vgs(th) (Max) @ Id: 5V @ 8mA, Power Dissipation (Max): 1890W (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole.
Weitere Produktangebote IXFB100N50P
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFB100N50P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 500V 100A PLUS264 Package / Case: TO-264-3, TO-264AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PLUS264™ Vgs(th) (Max) @ Id: 5V @ 8mA Power Dissipation (Max): 1890W (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole |
Produkt ist nicht verfügbar |
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IXFB100N50P | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™ Kind of package: tube Kind of channel: enhancement Mounting: THT Technology: HiPerFET™; Polar™ Type of transistor: N-MOSFET Case: PLUS264™ Polarisation: unipolar Reverse recovery time: 200ns Gate charge: 240nC On-state resistance: 49mΩ Gate-source voltage: ±30V Drain current: 100A Drain-source voltage: 500V Power dissipation: 1890W |
Produkt ist nicht verfügbar |