auf Bestellung 293 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 49.6 EUR |
| 10+ | 44.95 EUR |
| 25+ | 43.72 EUR |
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Produktbewertung abgeben
Technische Details IXFB100N50P IXYS
Description: MOSFET N-CH 500V 100A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V, Power Dissipation (Max): 1890W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V.
Weitere Produktangebote IXFB100N50P nach Preis ab 38.81 EUR bis 49.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFB100N50P | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 500V 100A PLUS264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V Power Dissipation (Max): 1890W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB100N50P | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 100A 3-Pin(3+Tab) ISOPLUS 264 |
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IXFB100N50P | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 100A 3-Pin(3+Tab) ISOPLUS 264 |
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IXFB100N50P | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 100A 3-Pin(3+Tab) ISOPLUS 264 |
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IXFB100N50P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 100A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFB100N50P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 100A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |