auf Bestellung 498 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 59.28 EUR |
| 25+ | 49.17 EUR |
| 50+ | 46.64 EUR |
| 100+ | 45.14 EUR |
| 250+ | 42.82 EUR |
| 500+ | 41.6 EUR |
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Technische Details IXFB110N60P3 IXYS
Description: MOSFET N-CH 600V 110A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V, Power Dissipation (Max): 1890W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V.
Weitere Produktangebote IXFB110N60P3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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IXFB110N60P3 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 600V 110A 3-Pin(3+Tab) PLUS 264 |
Produkt ist nicht verfügbar |
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IXFB110N60P3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 110A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 56mΩ Mounting: THT Gate charge: 254nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFB110N60P3 | Hersteller : IXYS |
Description: MOSFET N-CH 600V 110A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V Power Dissipation (Max): 1890W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFB110N60P3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 110A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 56mΩ Mounting: THT Gate charge: 254nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |