
IXFB170N30P IXYS

Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™
Reverse recovery time: 200ns
Drain-source voltage: 300V
Drain current: 170A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 258nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: PLUS264™
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
3+ | 23.84 EUR |
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Technische Details IXFB170N30P IXYS
Description: MOSFET N-CH 300V 170A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: PLUS264™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V.
Weitere Produktangebote IXFB170N30P nach Preis ab 23.84 EUR bis 56.2 EUR
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IXFB170N30P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™ Reverse recovery time: 200ns Drain-source voltage: 300V Drain current: 170A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Gate charge: 258nC Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: PLUS264™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFB170N30P | Hersteller : Littelfuse |
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auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFB170N30P | Hersteller : IXYS |
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auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB170N30P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFB170N30P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFB170N30P | Hersteller : IXYS |
![]() Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: PLUS264™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V |
Produkt ist nicht verfügbar |