IXFB170N30P IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 170A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 258nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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Technische Details IXFB170N30P IXYS
Description: MOSFET N-CH 300V 170A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: PLUS264™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V.
Weitere Produktangebote IXFB170N30P
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFB170N30P | Hersteller : Ixys Corporation |
Trans MOSFET N-CH 300V 170A 3-Pin(3+Tab) PLUS 264 |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |