auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 31.83 EUR |
10+ | 29.07 EUR |
25+ | 27.01 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFB170N30P Littelfuse
Description: MOSFET N-CH 300V 170A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: PLUS264™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V.
Weitere Produktangebote IXFB170N30P nach Preis ab 32.89 EUR bis 56.2 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXFB170N30P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 170A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 258nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IXFB170N30P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 170A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 258nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
IXFB170N30P | Hersteller : IXYS | MOSFET Polar Power MOSFET HiPerFET |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IXFB170N30P | Hersteller : Littelfuse | Trans MOSFET N-CH 300V 170A 3-Pin(3+Tab) PLUS 264 |
Produkt ist nicht verfügbar |
||||||||||||||||||
IXFB170N30P | Hersteller : Littelfuse | Trans MOSFET N-CH 300V 170A 3-Pin(3+Tab) PLUS 264 |
Produkt ist nicht verfügbar |
||||||||||||||||||
IXFB170N30P | Hersteller : IXYS |
Description: MOSFET N-CH 300V 170A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: PLUS264™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V |
Produkt ist nicht verfügbar |