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IXFB210N30P3

IXFB210N30P3 IXYS


Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXFB210N30P3_Datasheet.PDF
Hersteller: IXYS
MOSFETs N-Channel: Power MOSFET w/Fast Diode
auf Bestellung 250 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+46.76 EUR
10+35.83 EUR
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Technische Details IXFB210N30P3 IXYS

Description: MOSFET N-CH 300V 210A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 210A (Tc), Rds On (Max) @ Id, Vgs: 14.5mOhm @ 105A, 10V, Power Dissipation (Max): 1890W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V.

Weitere Produktangebote IXFB210N30P3 nach Preis ab 37.79 EUR bis 50.14 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFB210N30P3 IXFB210N30P3 Hersteller : Littelfuse Inc. Description: MOSFET N-CH 300V 210A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 105A, 10V
Power Dissipation (Max): 1890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+50.14 EUR
25+43.16 EUR
100+37.79 EUR
Im Einkaufswagen  Stück im Wert von  UAH