auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 69.87 EUR |
| 10+ | 59.49 EUR |
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Technische Details IXFB30N120P IXYS
Description: MOSFET N-CH 1200V 30A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 22500 pF @ 25 V.
Weitere Produktangebote IXFB30N120P nach Preis ab 59.68 EUR bis 71.81 EUR
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IXFB30N120P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1200V 30A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22500 pF @ 25 V |
auf Bestellung 545 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB30N120P | Hersteller : Littelfuse |
 Trans MOSFET N-CH 1.2KV 30A 3-Pin(3+Tab) PLUS 264 |
Produkt ist nicht verfügbar |
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IXFB30N120P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Gate charge: 310nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |