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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 84.02 EUR |
| 10+ | 78.43 EUR |
| 25+ | 75.12 EUR |
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Technische Details IXFB40N110Q3 IXYS
Description: MOSFET N-CH 1100V 40A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V, Power Dissipation (Max): 1560W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 8mA, Supplier Device Package: PLUS264™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1100 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V.
Weitere Produktangebote IXFB40N110Q3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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| IXFB40N110Q3 | Hersteller : IXYS | IXFB40N110Q3 THT N channel transistors |
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IXFB40N110Q3 | Hersteller : IXYS |
Description: MOSFET N-CH 1100V 40A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V Power Dissipation (Max): 1560W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 8mA Supplier Device Package: PLUS264™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1100 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V |
Produkt ist nicht verfügbar |