auf Bestellung 205 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 45.67 EUR |
| 10+ | 33.3 EUR |
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Technische Details IXFB60N80P IXYS
Description: MOSFET N-CH 800V 60A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: PLUS264™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V.
Weitere Produktangebote IXFB60N80P
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IXFB60N80P Produktcode: 154209
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 Transistoren > MOSFET N-CH |
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IXFB60N80P | Hersteller : Littelfuse |
Trans MOSFET N-CH 800V 60A 3-Pin(3+Tab) PLUS 264 |
Produkt ist nicht verfügbar |
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IXFB60N80P | Hersteller : Littelfuse |
Trans MOSFET N-CH 800V 60A 3-Pin(3+Tab) PLUS 264 |
Produkt ist nicht verfügbar |
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IXFB60N80P | Hersteller : Littelfuse |
Trans MOSFET N-CH 800V 60A 3-Pin(3+Tab) PLUS 264 |
Produkt ist nicht verfügbar |
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IXFB60N80P | Hersteller : IXYS |
Description: MOSFET N-CH 800V 60A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS264™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFB60N80P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 60A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns Technology: HiPerFET™; Polar™ |
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