
IXFB60N80P IXYS

Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 29.82 EUR |
10+ | 29.19 EUR |
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Technische Details IXFB60N80P IXYS
Description: MOSFET N-CH 800V 60A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V.
Weitere Produktangebote IXFB60N80P nach Preis ab 28.19 EUR bis 47.8 EUR
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IXFB60N80P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 60A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 250nC Kind of channel: enhancement Reverse recovery time: 250ns Kind of package: tube |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFB60N80P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 800V 60A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V |
auf Bestellung 264 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB60N80P | Hersteller : IXYS |
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auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFB60N80P Produktcode: 154209
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IXFB60N80P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFB60N80P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFB60N80P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |