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IXFB62N80Q3

IXFB62N80Q3 IXYS


media-3319827.pdf Hersteller: IXYS
MOSFET Q3Class HiPerFET Pwr MOSFET 800V/62A
auf Bestellung 4 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+69.8 EUR
10+ 60.98 EUR
25+ 56.53 EUR
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Technische Details IXFB62N80Q3 IXYS

Description: MOSFET N-CH 800V 62A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 31A, 10V, Power Dissipation (Max): 1560W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 8mA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V.

Weitere Produktangebote IXFB62N80Q3 nach Preis ab 71.5 EUR bis 71.5 EUR

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IXFB62N80Q3 IXFB62N80Q3 Hersteller : IXYS IXFB62N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 800V; 62A; 1560W; 300ns
Case: PLUS264™
Mounting: THT
Kind of package: tube
On-state resistance: 0.14Ω
Drain current: 62A
Drain-source voltage: 800V
Power dissipation: 1.56kW
Reverse recovery time: 300ns
Polarisation: unipolar
Gate charge: 0.27µC
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+71.5 EUR
IXFB62N80Q3 IXFB62N80Q3 Hersteller : IXYS IXFB62N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 800V; 62A; 1560W; 300ns
Case: PLUS264™
Mounting: THT
Kind of package: tube
On-state resistance: 0.14Ω
Drain current: 62A
Drain-source voltage: 800V
Power dissipation: 1.56kW
Reverse recovery time: 300ns
Polarisation: unipolar
Gate charge: 0.27µC
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+71.5 EUR
IXFB62N80Q3 IXFB62N80Q3 Hersteller : Littelfuse te_mosfets_n-channel_hiperfets_ixfb62n80q3_datasheet.pdf.pdf Trans MOSFET N-CH 800V 62A 3-Pin(3+Tab) PLUS 264
Produkt ist nicht verfügbar
IXFB62N80Q3 IXFB62N80Q3 Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb62n80q3_datasheet.pdf.pdf Description: MOSFET N-CH 800V 62A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 31A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Produkt ist nicht verfügbar