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Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 25+ | 47.9 EUR |
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Technische Details IXFB62N80Q3 IXYS
Description: MOSFET N-CH 800V 62A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 31A, 10V, Power Dissipation (Max): 1560W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 8mA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V.
Weitere Produktangebote IXFB62N80Q3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXFB62N80Q3 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 800V 62A 3-Pin(3+Tab) PLUS 264 |
Produkt ist nicht verfügbar |
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IXFB62N80Q3 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 800V 62A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 31A, 10V Power Dissipation (Max): 1560W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFB62N80Q3 | Hersteller : IXYS |
MOSFETs Q3Class HiPerFET Pwr MOSFET 800V/62A |
Produkt ist nicht verfügbar |