IXFB70N100X IXYS
Hersteller: IXYSDescription: MOSFET N-CH 1000V 70A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V
Power Dissipation (Max): 1785W (Tc)
Vgs(th) (Max) @ Id: 6V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9160 pF @ 25 V
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 84.13 EUR |
| 25+ | 70.51 EUR |
| 100+ | 65.81 EUR |
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Technische Details IXFB70N100X IXYS
Description: MOSFET N-CH 1000V 70A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V, Power Dissipation (Max): 1785W (Tc), Vgs(th) (Max) @ Id: 6V @ 8mA, Supplier Device Package: PLUS264™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9160 pF @ 25 V.
Weitere Produktangebote IXFB70N100X nach Preis ab 84.74 EUR bis 86.43 EUR
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IXFB70N100X | Hersteller : IXYS |
MOSFET 1000V 70A PLUS264 Power MOSFET |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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