IXFC14N80P IXYS
Hersteller: IXYS
Description: MOSFET N-CH 800V 8A ISOPLUS220
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 770mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 5.5V @ 4mA
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Technische Details IXFC14N80P IXYS
Description: MOSFET N-CH 800V 8A ISOPLUS220, Power Dissipation (Max): 130W (Tc), Rds On (Max) @ Id, Vgs: 770mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: ISOPLUS220™, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: ISOPLUS220™, Vgs(th) (Max) @ Id: 5.5V @ 4mA.