IXFC52N30P IXYS
Hersteller: IXYS
Description: MOSFET N-CH 300V 24A ISOPLUS220
Rds On (Max) @ Id, Vgs: 75mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Box
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 100W (Tc)
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Technische Details IXFC52N30P IXYS
Description: MOSFET N-CH 300V 24A ISOPLUS220, Rds On (Max) @ Id, Vgs: 75mOhm @ 26A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: ISOPLUS220™, Packaging: Box, Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: ISOPLUS220™, Vgs(th) (Max) @ Id: 5V @ 4mA, Power Dissipation (Max): 100W (Tc).