IXFH100N25P IXYS
Hersteller: IXYSDescription: MOSFET N-CH 250V 100A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 19.94 EUR |
| 30+ | 16.14 EUR |
| 120+ | 15.19 EUR |
| 510+ | 13.76 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFH100N25P IXYS
Description: MOSFET N-CH 250V 100A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V.
Weitere Produktangebote IXFH100N25P nach Preis ab 17.88 EUR bis 71.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXFH100N25P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 100A; 600W; TO247-3 Technology: HiPerFET™; Polar™ Mounting: THT Case: TO247-3 Kind of package: tube Power dissipation: 600W Polarisation: unipolar Gate charge: 185nC Kind of channel: enhanced Drain-source voltage: 250V Drain current: 100A On-state resistance: 27mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||
|
|
IXFH100N25P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 100A; 600W; TO247-3 Technology: HiPerFET™; Polar™ Mounting: THT Case: TO247-3 Kind of package: tube Power dissipation: 600W Polarisation: unipolar Gate charge: 185nC Kind of channel: enhanced Drain-source voltage: 250V Drain current: 100A On-state resistance: 27mΩ Type of transistor: N-MOSFET |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
IXFH100N25P | Hersteller : Littelfuse |
Trans MOSFET N-CH 250V 100A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
|||||||||||
 |
IXFH100N25P | Hersteller : IXYS |
MOSFET 100 Amps 250V 0.027 Rds |
Produkt ist nicht verfügbar |