Produkte > IXYS > IXFH102N15T
IXFH102N15T

IXFH102N15T IXYS


littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_102n15t_datasheet.pdf.pdf Hersteller: IXYS
Description: MOSFET N-CH 150V 102A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 25 V
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details IXFH102N15T IXYS

Description: MOSFET N-CH 150V 102A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 102A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V, Power Dissipation (Max): 455W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247AD (IXFH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 25 V.

Weitere Produktangebote IXFH102N15T

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IXFH102N15T IXFH102N15T Hersteller : IXYS media-3323611.pdf MOSFET 102 Amps 0V
Produkt ist nicht verfügbar