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IXFH110N15T2

IXFH110N15T2 IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC035820&compId=IXFH110N15T2.pdf?ci_sign=72224343f620ffa61176fabd9afc9a1c50cf9d78 Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Reverse recovery time: 85ns
Drain-source voltage: 150V
Drain current: 110A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 150nC
Kind of channel: enhancement
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 286 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+8.15 EUR
10+7.32 EUR
11+6.84 EUR
30+6.68 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXFH110N15T2 IXYS

Description: MOSFET N-CH 150V 110A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247AD (IXFH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V.

Weitere Produktangebote IXFH110N15T2 nach Preis ab 6.68 EUR bis 12.83 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFH110N15T2 IXFH110N15T2 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC035820&compId=IXFH110N15T2.pdf?ci_sign=72224343f620ffa61176fabd9afc9a1c50cf9d78 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Reverse recovery time: 85ns
Drain-source voltage: 150V
Drain current: 110A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 150nC
Kind of channel: enhancement
Mounting: THT
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.15 EUR
10+7.32 EUR
11+6.84 EUR
30+6.68 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFH110N15T2 IXFH110N15T2 Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixfh110n15t2_datasheet.pdf.pdf Description: MOSFET N-CH 150V 110A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
auf Bestellung 660 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+12.83 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IXFH110N15T2 IXFH110N15T2 Hersteller : Littelfuse mosfets_n-channel_trench_gate_ixfh110n15t2_datasheet.pdf.pdf Trans MOSFET N-CH 150V 110A 3-Pin(3+Tab) TO-247
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IXFH110N15T2 IXFH110N15T2 Hersteller : IXYS media-3320128.pdf MOSFET 110 Amps 150V
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