IXFH110N25T IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Case: TO247-3
Kind of package: tube
Drain-source voltage: 250V
Drain current: 110A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET
Power dissipation: 694W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 157nC
Kind of channel: enhancement
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 256 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 12.56 EUR |
| 9+ | 8.11 EUR |
| 30+ | 7.84 EUR |
| 120+ | 7.79 EUR |
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Technische Details IXFH110N25T IXYS
Description: MOSFET N-CH 250V 110A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V, Power Dissipation (Max): 694W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 3mA, Supplier Device Package: TO-247AD (IXFH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V.
Weitere Produktangebote IXFH110N25T nach Preis ab 7.79 EUR bis 15.47 EUR
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IXFH110N25T | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3 Case: TO247-3 Kind of package: tube Drain-source voltage: 250V Drain current: 110A On-state resistance: 26mΩ Type of transistor: N-MOSFET Power dissipation: 694W Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Gate charge: 157nC Kind of channel: enhancement Mounting: THT |
auf Bestellung 256 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH110N25T | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 250V 110A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH110N25T | Hersteller : IXYS |
MOSFET 110 Amps 0V |
Produkt ist nicht verfügbar |