IXFH120N20P IXYS SEMICONDUCTOR
Hersteller: IXYS SEMICONDUCTOR
Description: IXYS SEMICONDUCTOR - IXFH120N20P - Leistungs-MOSFET, n-Kanal, 200 V, 120 A, 0.022 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 120A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 714W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.022ohm
| Anzahl | Privatkunde |
|---|---|
| 10+ | 23.23 EUR |
| 12+ | 19.17 EUR |
| 50+ | 18.61 EUR |
| 100+ | 18.04 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
10 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFH120N20P IXYS SEMICONDUCTOR
Description: IXYS SEMICONDUCTOR - IXFH120N20P - Leistungs-MOSFET, n-Kanal, 200 V, 120 A, 0.022 ohm, TO-247, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 200V, rohsCompliant: YES, Dauer-Drainstrom Id: 120A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 5V, euEccn: NLR, Verlustleistung: 714W, Bauform - Transistor: TO-247, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.022ohm.
Weitere Produktangebote IXFH120N20P nach Preis ab 12.9 EUR bis 25.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXFH120N20P | IXYS |
MOSFETs 120 Amps 200V 0.022 Rds |
auf Bestellung 579 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH120N20P | IXYS |
Description: MOSFET N-CH 200V 120A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V Power Dissipation (Max): 714W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V |
auf Bestellung 1105 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH120N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 120A Power dissipation: 714W Case: TO247-3 On-state resistance: 22mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 100ns Technology: HiPerFET™; Polar™ |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXFH120N20P |
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Hersteller: IXYS
MOSFETs 120 Amps 200V 0.022 Rds
MOSFETs 120 Amps 200V 0.022 Rds
auf Bestellung 579 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.94 EUR |
| 10+ | 14.22 EUR |
| 120+ | 14.16 EUR |
| IXFH120N20P |
|
Hersteller: IXYS
Description: MOSFET N-CH 200V 120A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Power Dissipation (Max): 714W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Description: MOSFET N-CH 200V 120A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Power Dissipation (Max): 714W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
auf Bestellung 1105 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.3 EUR |
| 30+ | 15.4 EUR |
| 120+ | 13.23 EUR |
| 510+ | 12.9 EUR |
| IXFH120N20P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Technology: HiPerFET™; Polar™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Technology: HiPerFET™; Polar™
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)