IXFH120N20P IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Technology: HiPerFET™; Polar™
| Anzahl | Privatkunde |
|---|---|
| 6+ | 16.93 EUR |
| 7+ | 14.1 EUR |
| 10+ | 12.51 EUR |
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Technische Details IXFH120N20P IXYS
Description: MOSFET N-CH 200V 120A TO247AD, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247AD (IXFH), Vgs(th) (Max) @ Id: 5V @ 4mA, Power Dissipation (Max): 714W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Package / Case: TO-247-3, Packaging: Tube, Mounting Type: Through Hole.
Weitere Produktangebote IXFH120N20P nach Preis ab 12.9 EUR bis 25.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXFH120N20P | IXYS |
MOSFETs 120 Amps 200V 0.022 Rds |
auf Bestellung 579 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH120N20P | IXYS |
Description: MOSFET N-CH 200V 120A TO247AD Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AD (IXFH) Vgs(th) (Max) @ Id: 5V @ 4mA Power Dissipation (Max): 714W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Package / Case: TO-247-3 Packaging: Tube Mounting Type: Through Hole |
auf Bestellung 1105 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IXFH120N20P |
|
Hersteller: IXYS
MOSFETs 120 Amps 200V 0.022 Rds
MOSFETs 120 Amps 200V 0.022 Rds
auf Bestellung 579 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.94 EUR |
| 10+ | 14.22 EUR |
| 120+ | 14.16 EUR |
| IXFH120N20P |
|
Hersteller: IXYS
Description: MOSFET N-CH 200V 120A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 714W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-247-3
Packaging: Tube
Mounting Type: Through Hole
Description: MOSFET N-CH 200V 120A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 714W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-247-3
Packaging: Tube
Mounting Type: Through Hole
auf Bestellung 1105 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.3 EUR |
| 30+ | 15.4 EUR |
| 120+ | 13.23 EUR |
| 510+ | 12.9 EUR |