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IXFH120N20P

IXFH120N20P IXYS


IXFH(K)120N20P.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Technology: HiPerFET™; Polar™
auf Bestellung 51 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+14.23 EUR
7+11.85 EUR
10+10.51 EUR
Mindestbestellmenge: 6
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Technische Details IXFH120N20P IXYS

Description: MOSFET N-CH 200V 120A TO247AD, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247AD (IXFH), Vgs(th) (Max) @ Id: 5V @ 4mA, Power Dissipation (Max): 714W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Package / Case: TO-247-3, Packaging: Tube, Mounting Type: Through Hole.

Weitere Produktangebote IXFH120N20P nach Preis ab 10.84 EUR bis 21.26 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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IXFH120N20P IXFH120N20P Hersteller : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_120N20P_Datasheet.PDF MOSFETs 120 Amps 200V 0.022 Rds
auf Bestellung 579 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.96 EUR
10+11.95 EUR
120+11.9 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFH120N20P IXFH120N20P Hersteller : IXYS littelfuse-discrete-mosfets-ixf-120n20p-datasheet?assetguid=71b0a9b9-292f-4f2e-8710-b0e25a10c9f8 Description: MOSFET N-CH 200V 120A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 714W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-247-3
Packaging: Tube
Mounting Type: Through Hole
auf Bestellung 1105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.26 EUR
30+12.94 EUR
120+11.12 EUR
510+10.84 EUR
Im Einkaufswagen  Stück im Wert von  UAH