Produkte > IXYS > IXFH150N25X3
IXFH150N25X3

IXFH150N25X3 IXYS


IXFH150N25X3.pdf Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
3+23.84 EUR
30+ 14.4 EUR
Mindestbestellmenge: 3
Produktrezensionen
Produktbewertung abgeben

Technische Details IXFH150N25X3 IXYS

Description: MOSFET N-CH 250V 150A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V.

Weitere Produktangebote IXFH150N25X3 nach Preis ab 18.71 EUR bis 27.09 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IXFH150N25X3 IXFH150N25X3 Hersteller : IXYS IXFH150N25X3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3+23.84 EUR
Mindestbestellmenge: 3
IXFH150N25X3 IXFH150N25X3 Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_150n25x3_datasheet.pdf.pdf Description: MOSFET N-CH 250V 150A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+27.09 EUR
30+ 21.94 EUR
120+ 20.65 EUR
510+ 18.71 EUR
IXFH150N25X3 IXFH150N25X3 Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 250V 150A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXFH150N25X3 IXFH150N25X3 Hersteller : IXYS media-3321180.pdf MOSFET MSFT N-CH ULTRA JNCT X3 3&44
Produkt ist nicht verfügbar