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IXFH15N100P

IXFH15N100P IXYS

DS99891AIXFHFV15N100PIXFV15N100PS.pdf
Hersteller: IXYS
Description: MOSFET N-CH 1000V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 760mOhm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
auf Bestellung 844 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+28.44 EUR
30+17.31 EUR
60+15.99 EUR
120+14.88 EUR
510+13.54 EUR
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Technische Details IXFH15N100P IXYS

Description: MOSFET N-CH 1000V 15A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 760mOhm @ 500mA, 10V, Power Dissipation (Max): 543W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: TO-247AD (IXFH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V.

Weitere Produktangebote IXFH15N100P

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IXFH15N100P IXFH15N100P IXYS IXFH15N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 760mΩ
Power dissipation: 543W
Gate charge: 97nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 15A
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IXFH15N100P IXFH15N100P.pdf
IXFH15N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 760mΩ
Power dissipation: 543W
Gate charge: 97nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 15A
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH