Weitere Produktangebote IXFH160N15T2 nach Preis ab 6.72 EUR bis 14.87 EUR
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IXFH160N15T2 | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3 Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Features of semiconductor devices: thrench gate power mosfet Gate charge: 253nC On-state resistance: 9mΩ Drain current: 160A Drain-source voltage: 150V Power dissipation: 880W Case: TO247-3 |
auf Bestellung 284 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH160N15T2 | Hersteller : IXYS |
Description: MOSFET N-CH 150V 160A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V Power Dissipation (Max): 880W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V |
auf Bestellung 1041 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH160N15T2 | Hersteller : IXYS |
MOSFETs Trench T2 HiperFET Power MOSFET |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFH160N15T2 | Hersteller : IXYS/Littelfuse |
N-канальний ПТ, Udss, В = 150, Id = 160 А, Ciss, пФ @ Uds, В = 15000 @ 25, Qg, нКл = 253 @ 10 В, Rds = 9 мОм @ 80 A, 10 В, Ugs(th) = 4,5 В @ 1000 мкА, Р, Вт = 880 Вт, Тексп, °C = -55...+175, Тип монт. = вивідний,... Група товару: Транзистори Корпус: TO-24 Anzahl je Verpackung: 30 Stücke |
verfügbar 8 Stücke: |