auf Bestellung 30 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 20.93 EUR |
| 10+ | 19.32 EUR |
| 120+ | 15.11 EUR |
| 270+ | 13.57 EUR |
| 510+ | 13.55 EUR |
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Technische Details IXFH160N15T2 IXYS
Description: MOSFET N-CH 150V 160A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V, Power Dissipation (Max): 880W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-247AD (IXFH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V.
Weitere Produktangebote IXFH160N15T2 nach Preis ab 5.25 EUR bis 35.75 EUR
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IXFH160N15T2 | Hersteller : IXYS |
 Description: MOSFET N-CH 150V 160A TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V Power Dissipation (Max): 880W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V |
auf Bestellung 16 Stücke: Lieferzeit 21-28 Tag (e) |
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IXFH160N15T2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 160A Power dissipation: 880W Case: TO247-3 On-state resistance: 9mΩ Mounting: THT Gate charge: 253nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH160N15T2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 160A Power dissipation: 880W Case: TO247-3 On-state resistance: 9mΩ Mounting: THT Gate charge: 253nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXFH160N15T2 | Hersteller : IXYS/Littelfuse |
N-канальний ПТ; Udss, В = 150; Id = 160 А; Ciss, пФ @ Uds, В = 15000 @ 25; Qg, нКл = 253 @ 10 В; Rds = 9 мОм @ 80 A, 10 В; Ugs(th) = 4,5 В @ 1000 мкА; Р, Вт = 880 Вт; Тексп, °C = -55...+175; Тип монт. = вивідний; TO-247-3 |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH160N15T2 Produktcode: 126302 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IXFH160N15T2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 150V 160A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |