Weitere Produktangebote IXFH160N15T2 nach Preis ab 8 EUR bis 17.7 EUR
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IXFH160N15T2 | IXYS |
 Description: MOSFET N-CH 150V 160A TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V Power Dissipation (Max): 880W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V |
auf Bestellung 1041 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH160N15T2 | IXYS |
MOSFETs Trench T2 HiperFET Power MOSFET |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFH160N15T2 | IXYS/Littelfuse |
N-канальний ПТ, Udss, В = 150, Id = 160 А, Ciss, пФ @ Uds, В = 15000 @ 25, Qg, нКл = 253 @ 10 В, Rds = 9 мОм @ 80 A, 10 В, Ugs(th) = 4,5 В @ 1000 мкА, Р, Вт = 880 Вт, Тексп, °C = -55...+175, Тип монт. = вивідний,... Транзистори Корпус: TO-247-3 Од. вим: ш Anzahl je Verpackung: 30 Stücke |
verfügbar 8 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| IXFH160N15T2 |
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Hersteller: IXYS
Description: MOSFET N-CH 150V 160A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V
Power Dissipation (Max): 880W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Description: MOSFET N-CH 150V 160A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V
Power Dissipation (Max): 880W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
auf Bestellung 1041 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.49 EUR |
| 30+ | 10.33 EUR |
| 120+ | 8.76 EUR |
| 510+ | 8 EUR |
| IXFH160N15T2 |
|
Hersteller: IXYS
MOSFETs Trench T2 HiperFET Power MOSFET
MOSFETs Trench T2 HiperFET Power MOSFET
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.7 EUR |
| 10+ | 10.5 EUR |
| 120+ | 9.81 EUR |
| IXFH160N15T2 |
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Hersteller: IXYS/Littelfuse
N-канальний ПТ, Udss, В = 150, Id = 160 А, Ciss, пФ @ Uds, В = 15000 @ 25, Qg, нКл = 253 @ 10 В, Rds = 9 мОм @ 80 A, 10 В, Ugs(th) = 4,5 В @ 1000 мкА, Р, Вт = 880 Вт, Тексп, °C = -55...+175, Тип монт. = вивідний,... Транзистори Корпус: TO-247-3 Од. вим: ш
Anzahl je Verpackung: 30 Stücke
N-канальний ПТ, Udss, В = 150, Id = 160 А, Ciss, пФ @ Uds, В = 15000 @ 25, Qg, нКл = 253 @ 10 В, Rds = 9 мОм @ 80 A, 10 В, Ugs(th) = 4,5 В @ 1000 мкА, Р, Вт = 880 Вт, Тексп, °C = -55...+175, Тип монт. = вивідний,... Транзистори Корпус: TO-247-3 Од. вим: ш
Anzahl je Verpackung: 30 Stücke
verfügbar 8 Stücke: