IXFH18N100Q3 IXYS

Description: MOSFET N-CH 1000V 18A TO247AD, Input Capacitance (Ciss) (Max) @ Vds: 4890 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247AD (IXFH), Vgs(th) (Max) @ Id: 6.5V @ 4mA, Power Dissipation (Max): 830W (Tc), Rds On (Max) @ Id, Vgs: 660mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.