IXFH20N100P IXYS
Hersteller: IXYSDescription: MOSFET N-CH 1000V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
auf Bestellung 74 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.79 EUR |
| 30+ | 13.32 EUR |
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Technische Details IXFH20N100P IXYS
Description: MOSFET N-CH 1000V 20A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V, Power Dissipation (Max): 660W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: TO-247AD (IXFH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V.
Weitere Produktangebote IXFH20N100P nach Preis ab 13.78 EUR bis 22.07 EUR
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IXFH20N100P | Hersteller : IXYS |
MOSFETs 20 Amps 1000V 1 Rds |
auf Bestellung 287 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH20N100P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 20A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXFH20N100P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 20A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXFH20N100P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 20A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXFH20N100P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 20A Power dissipation: 660W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 570mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |