IXFH20N85X Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 850V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 15.73 EUR |
| 30+ | 12.56 EUR |
| 120+ | 11.23 EUR |
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Technische Details IXFH20N85X Littelfuse Inc.
Description: MOSFET N-CH 850V 20A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 2.5mA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V.
Weitere Produktangebote IXFH20N85X nach Preis ab 10.40 EUR bis 17.14 EUR
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IXFH20N85X | Hersteller : IXYS |
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auf Bestellung 297 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH20N85X | Hersteller : Littelfuse |
Trans MOSFET N-CH 850V 20A 3-Pin(3+Tab) TO-247AD |
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IXFH20N85X | Hersteller : Littelfuse |
Trans MOSFET N-CH 850V 20A 3-Pin(3+Tab) TO-247AD |
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IXFH20N85X | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO247-3; 190ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 20A Power dissipation: 540W Case: TO247-3 On-state resistance: 0.33Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 190ns Features of semiconductor devices: ultra junction x-class Anzahl je Verpackung: 300 Stücke |
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IXFH20N85X | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO247-3; 190ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 20A Power dissipation: 540W Case: TO247-3 On-state resistance: 0.33Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 190ns Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |