Weitere Produktangebote IXFH22N65X2 транзистор nach Preis ab 4.7 EUR bis 12.37 EUR
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IXFH22N65X2 | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 390W Case: TO247-3 On-state resistance: 0.145Ω Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 145ns Features of semiconductor devices: ultra junction x-class |
auf Bestellung 189 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH22N65X2 | Hersteller : Ixys Corporation |
Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) TO-247AD |
auf Bestellung 203 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH22N65X2 | Hersteller : IXYS |
MOSFETs MOSFET 650V/22A Ultra Junction X2 |
auf Bestellung 179 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH22N65X2 | Hersteller : IXYS |
Description: MOSFET N-CH 650V 22A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1.5mA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V |
auf Bestellung 5060 Stücke: Lieferzeit 10-14 Tag (e) |
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