
IXFH230N10T IXYS

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Drain-source voltage: 100V
Drain current: 230A
Case: TO247-3
Polarisation: unipolar
On-state resistance: 4.7mΩ
Power dissipation: 650W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 250nC
Kind of channel: enhancement
Mounting: THT
Reverse recovery time: 82ns
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 107 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
7+ | 11.34 EUR |
10+ | 7.29 EUR |
120+ | 7.16 EUR |
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Technische Details IXFH230N10T IXYS
Description: MOSFET N-CH 100V 230A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 230A (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 500mA, 10V, Power Dissipation (Max): 650W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-247AD (IXFH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V.
Weitere Produktangebote IXFH230N10T nach Preis ab 7.29 EUR bis 17.60 EUR
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IXFH230N10T | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns Drain-source voltage: 100V Drain current: 230A Case: TO247-3 Polarisation: unipolar On-state resistance: 4.7mΩ Power dissipation: 650W Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 250nC Kind of channel: enhancement Mounting: THT Reverse recovery time: 82ns Type of transistor: N-MOSFET |
auf Bestellung 107 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH230N10T | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 500mA, 10V Power Dissipation (Max): 650W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH230N10T | Hersteller : Littelfuse |
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IXFH230N10T | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFH230N10T | Hersteller : IXYS |
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Produkt ist nicht verfügbar |