auf Bestellung 1015 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 20.15 EUR |
| 10+ | 14.08 EUR |
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Technische Details IXFH30N50Q3 IXYS
Description: MOSFET N-CH 500V 30A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V, Power Dissipation (Max): 690W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 4mA, Supplier Device Package: TO-247AD (IXFH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V.
Weitere Produktangebote IXFH30N50Q3 nach Preis ab 12.69 EUR bis 21.61 EUR
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IXFH30N50Q3 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 500V 30A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V Power Dissipation (Max): 690W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
auf Bestellung 412 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH30N50Q3 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247AD |
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IXFH30N50Q3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXFH30N50Q3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 690W Case: TO247-3 On-state resistance: 0.2Ω Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns Gate-source voltage: ±20V Technology: HiPerFET™ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFH30N50Q3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 690W Case: TO247-3 On-state resistance: 0.2Ω Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns Gate-source voltage: ±20V Technology: HiPerFET™ |
Produkt ist nicht verfügbar |