IXFH30N60Q IXYS
Hersteller: IXYS
Description: MOSFET N-CH 600V 30A TO247AD
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
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Technische Details IXFH30N60Q IXYS
Description: MOSFET N-CH 600V 30A TO247AD, Vgs(th) (Max) @ Id: 4.5V @ 4mA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247AD (IXFH).
Weitere Produktangebote IXFH30N60Q
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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IXFH30N60Q | Hersteller : IXYS |
 MOSFETs 30 Amps 600V 0.23 Rds |
Produkt ist nicht verfügbar |