IXFH32N100X Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 1000V 32A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 25 V
auf Bestellung 218 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 25.91 EUR |
| 30+ | 21.83 EUR |
| 120+ | 21.41 EUR |
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Technische Details IXFH32N100X Littelfuse Inc.
Description: MOSFET N-CH 1000V 32A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 6V @ 4mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 25 V.
Weitere Produktangebote IXFH32N100X nach Preis ab 28.25 EUR bis 28.25 EUR
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