IXFH34N60X2A IXYS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W, Type of transistor: N-MOSFET, Technology: HiPerFET™; X2-Class, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 34A, Power dissipation: 540W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 0.1Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Reverse recovery time: 164ns, Pulsed drain current: 68A, Gate charge: 56nC, Features of semiconductor devices: ultra junction x-class, Application: automotive industry.