IXFH34N60X2A IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 540W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Technology: HiPerFET™; X2-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 68A
Mounting: THT
Case: TO247-3
Reverse recovery time: 164ns
Drain-source voltage: 600V
Drain current: 34A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 540W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Technology: HiPerFET™; X2-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 68A
Mounting: THT
Case: TO247-3
Reverse recovery time: 164ns
Drain-source voltage: 600V
Drain current: 34A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
8+ | 9.02 EUR |
9+ | 8.02 EUR |
10+ | 7.56 EUR |
30+ | 7.31 EUR |
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Technische Details IXFH34N60X2A IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W, On-state resistance: 0.1Ω, Type of transistor: N-MOSFET, Application: automotive industry, Power dissipation: 540W, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: ultra junction x-class, Gate charge: 56nC, Technology: HiPerFET™; X2-Class, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 68A, Mounting: THT, Case: TO247-3, Reverse recovery time: 164ns, Drain-source voltage: 600V, Drain current: 34A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXFH34N60X2A nach Preis ab 7.56 EUR bis 9.02 EUR
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IXFH34N60X2A | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W On-state resistance: 0.1Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 540W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ultra junction x-class Gate charge: 56nC Technology: HiPerFET™; X2-Class Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 68A Mounting: THT Case: TO247-3 Reverse recovery time: 164ns Drain-source voltage: 600V Drain current: 34A |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH34N60X2A | Hersteller : IXYS | MOSFET DiscMSFTAuto-Ultra Junc X2Class TO-247AD |
Produkt ist nicht verfügbar |