Produkte > IXYS > IXFH34N60X2A
IXFH34N60X2A

IXFH34N60X2A IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2850059F7229820&compId=IXFH34N60X2A.pdf?ci_sign=670b82a0339a408baa8b89dce5ae98931a570f1b Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Pulsed drain current: 68A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Technology: HiPerFET™; X2-Class
Reverse recovery time: 164ns
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+35.75 EUR
3+23.84 EUR
6+11.91 EUR
10+7.38 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IXFH34N60X2A IXYS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 34A, Pulsed drain current: 68A, Power dissipation: 540W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 0.1Ω, Mounting: THT, Gate charge: 56nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: ultra junction x-class, Technology: HiPerFET™; X2-Class, Reverse recovery time: 164ns, Application: automotive industry, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote IXFH34N60X2A nach Preis ab 35.75 EUR bis 35.75 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFH34N60X2A IXFH34N60X2A Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2850059F7229820&compId=IXFH34N60X2A.pdf?ci_sign=670b82a0339a408baa8b89dce5ae98931a570f1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Pulsed drain current: 68A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Technology: HiPerFET™; X2-Class
Reverse recovery time: 164ns
Application: automotive industry
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFH34N60X2A IXFH34N60X2A Hersteller : IXYS MOSFET DiscMSFTAuto-Ultra Junc X2Class TO-247AD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH