| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.28 EUR |
| 10+ | 10.91 EUR |
| 120+ | 9.89 EUR |
| 510+ | 9.12 EUR |
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Technische Details IXFH34N65X3 IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 34A, Case: TO247-3, Gate-source voltage: ±20V, On-state resistance: 0.1Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Reverse recovery time: 150ns, Pulsed drain current: 48A, Power dissipation: 446W, Gate charge: 29nC, Technology: HiPerFET™; X3-Class.
Weitere Produktangebote IXFH34N65X3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IXFH34N65X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Pulsed drain current: 48A Power dissipation: 446W Gate charge: 29nC Technology: HiPerFET™; X3-Class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFH34N65X3 |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Pulsed drain current: 48A
Power dissipation: 446W
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Pulsed drain current: 48A
Power dissipation: 446W
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH