auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.35 EUR |
| 10+ | 8.5 EUR |
| 120+ | 7.73 EUR |
| 510+ | 7.43 EUR |
| 1020+ | 7.27 EUR |
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Technische Details IXFH34N65X3 IXYS
Description: MOSFET 34A 650V X3 TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 5.2V @ 2.5mA, Supplier Device Package: TO-247 (IXFH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V.
Weitere Produktangebote IXFH34N65X3 nach Preis ab 7.44 EUR bis 11.39 EUR
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IXFH34N65X3 | Hersteller : Littelfuse Inc. |
 Description: MOSFET 34A 650V X3 TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 2.5mA Supplier Device Package: TO-247 (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V |
auf Bestellung 158 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFH34N65X3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: HiPerFET™; X3-Class Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IXFH34N65X3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: HiPerFET™; X3-Class |
Produkt ist nicht verfügbar |