IXFH46N65X2 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 263 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 8.08 EUR |
| 10+ | 7.76 EUR |
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Technische Details IXFH46N65X2 IXYS
Description: MOSFET N-CH 650V 46A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 76mOhm @ 23A, 10V, Power Dissipation (Max): 660W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 4mA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V.
Weitere Produktangebote IXFH46N65X2 nach Preis ab 7.76 EUR bis 15.96 EUR
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IXFH46N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 46A Power dissipation: 660W Case: TO247-3 On-state resistance: 69mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 180ns Features of semiconductor devices: ultra junction x-class Anzahl je Verpackung: 1 Stücke |
auf Bestellung 263 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH46N65X2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 650V 46A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 76mOhm @ 23A, 10V Power Dissipation (Max): 660W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 4mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH46N65X2 | Hersteller : IXYS |
MOSFETs MOSFET 650V/46A Ultra Junction X2 |
auf Bestellung 167 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH46N65X2 | Hersteller : Ixys Corporation |
Trans MOSFET N-CH 650V 46A 3-Pin(3+Tab) TO-247AD |
auf Bestellung 263 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH46N65X2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 46A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXFH46N65X2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 46A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |