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IXFH46N65X2W

IXFH46N65X2W IXYS


Hersteller: IXYS
MOSFETs 650V 69mohm 46A X2-Class HiPerFET in TO-247
auf Bestellung 282 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+15.63 EUR
10+13.39 EUR
120+11.16 EUR
510+9.84 EUR
1020+8.85 EUR
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Technische Details IXFH46N65X2W IXYS

Description: 650V 69m 46A X2-Class HiPerFET, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 69mOhm @ 23A, 10V, Power Dissipation (Max): 660W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 4mA, Supplier Device Package: TO-247 (IXFH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V.

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IXFH46N65X2W Hersteller : IXYS Description: 650V 69m 46A X2-Class HiPerFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 23A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
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