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IXFH48N60X3

IXFH48N60X3 IXYS


media-3320745.pdf Hersteller: IXYS
MOSFET DISCRETE MOSFET 48A 600V X3 TO
auf Bestellung 656 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+16.68 EUR
10+ 15.36 EUR
30+ 13.32 EUR
120+ 11.86 EUR
270+ 11.44 EUR
510+ 10.74 EUR
1020+ 9.47 EUR
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Technische Details IXFH48N60X3 IXYS

Description: MOSFET ULTRA JCT 600V 48A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V.

Weitere Produktangebote IXFH48N60X3 nach Preis ab 13.41 EUR bis 16.79 EUR

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IXFH48N60X3 IXFH48N60X3 Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh48n60x3_datasheet.pdf.pdf Description: MOSFET ULTRA JCT 600V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+16.79 EUR
30+ 13.41 EUR
Mindestbestellmenge: 2
IXFH48N60X3 Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh48n60x3_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Pulsed drain current: 68A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 163ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH48N60X3 Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh48n60x3_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Pulsed drain current: 68A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 163ns
Produkt ist nicht verfügbar