auf Bestellung 656 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 16.68 EUR |
10+ | 15.36 EUR |
30+ | 13.32 EUR |
120+ | 11.86 EUR |
270+ | 11.44 EUR |
510+ | 10.74 EUR |
1020+ | 9.47 EUR |
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Technische Details IXFH48N60X3 IXYS
Description: MOSFET ULTRA JCT 600V 48A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V.
Weitere Produktangebote IXFH48N60X3 nach Preis ab 13.41 EUR bis 16.79 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFH48N60X3 | Hersteller : Littelfuse Inc. |
Description: MOSFET ULTRA JCT 600V 48A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V |
auf Bestellung 75 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH48N60X3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Pulsed drain current: 68A Power dissipation: 520W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 163ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFH48N60X3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Pulsed drain current: 68A Power dissipation: 520W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 163ns |
Produkt ist nicht verfügbar |