IXFH48N60X3 Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET ULTRA JCT 600V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
auf Bestellung 58 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 16.3 EUR |
| 30+ | 10.25 EUR |
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Technische Details IXFH48N60X3 Littelfuse Inc.
Description: MOSFET ULTRA JCT 600V 48A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V.
Weitere Produktangebote IXFH48N60X3 nach Preis ab 9.22 EUR bis 16.83 EUR
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IXFH48N60X3 | Hersteller : IXYS |
MOSFETs TO247 600V 48A N-CH X3CLASS |
auf Bestellung 626 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFH48N60X3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W Mounting: THT Reverse recovery time: 163ns Drain-source voltage: 600V Drain current: 48A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar Kind of package: tube Gate charge: 38nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 68A Case: TO247-3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IXFH48N60X3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W Mounting: THT Reverse recovery time: 163ns Drain-source voltage: 600V Drain current: 48A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar Kind of package: tube Gate charge: 38nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 68A Case: TO247-3 |
Produkt ist nicht verfügbar |