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IXFH50N60X

IXFH50N60X IXYS

IXFH(Q,T)50N60X.pdf Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO247-3; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 195ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+14.67 EUR
7+ 10.78 EUR
8+ 10.2 EUR
Mindestbestellmenge: 5
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Technische Details IXFH50N60X IXYS

Description: MOSFET N-CH 600V 50A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 73mOhm @ 25A, 10V, Power Dissipation (Max): 660W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V.

Weitere Produktangebote IXFH50N60X nach Preis ab 10.2 EUR bis 14.67 EUR

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IXFH50N60X IXFH50N60X Hersteller : IXYS IXFH(Q,T)50N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO247-3; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 195ns
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+14.67 EUR
7+ 10.78 EUR
8+ 10.2 EUR
Mindestbestellmenge: 5
IXFH50N60X Hersteller : Littelfuse 13ds100657ixft-fq-fh50n60x.pdf X-CLASS HIPERFET POWER MOSFET
Produkt ist nicht verfügbar
IXFH50N60X IXFH50N60X Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n60x_datasheet.pdf.pdf Description: MOSFET N-CH 600V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 25A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V
Produkt ist nicht verfügbar
IXFH50N60X IXFH50N60X Hersteller : IXYS media-3322644.pdf MOSFET DiscMSFT NCh UltrJnctn XClass TO-247AD
Produkt ist nicht verfügbar