IXFH52N50P2 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 52A
Power dissipation: 960W
Case: TO247-3
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 290 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 14.80 EUR |
| 7+ | 10.57 EUR |
| 8+ | 10.00 EUR |
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Technische Details IXFH52N50P2 IXYS
Description: MOSFET N-CH 500V 52A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-247AD (IXFH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V.
Weitere Produktangebote IXFH52N50P2 nach Preis ab 10.00 EUR bis 19.22 EUR
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IXFH52N50P2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 52A Power dissipation: 960W Case: TO247-3 On-state resistance: 0.12Ω Mounting: THT Gate charge: 113nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 290 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH52N50P2 | Hersteller : IXYS |
MOSFETs PolarP2 Power MOSFET |
auf Bestellung 504 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFH52N50P2 |
auf Bestellung 11000 Stücke: Lieferzeit 18-25 Tag (e) |
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IXFH52N50P2 Produktcode: 211155
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IXFH52N50P2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 500V 52A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V |
Produkt ist nicht verfügbar |