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IXFH56N30X3

IXFH56N30X3 IXYS


IXF_56N30X3.pdf 300VProductBrief.pdf
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 56A
Power dissipation: 320W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 56nC
Reverse recovery time: 115ns
auf Bestellung 129 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.55 EUR
10+8.25 EUR
Mindestbestellmenge: 7
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Technische Details IXFH56N30X3 IXYS

Description: MOSFET N-CH 300V 56A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V, Power Dissipation (Max): 320W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.5mA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V.

Weitere Produktangebote IXFH56N30X3 nach Preis ab 8.29 EUR bis 17.27 EUR

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IXFH56N30X3 IXFH56N30X3 Hersteller : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Ultra_Junction_IXF_56N30X3_Datasheet.PDF MOSFETs TO247 300V 56A N-CH X3CLASS
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+16.3 EUR
10+10.05 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFH56N30X3 IXFH56N30X3 Hersteller : IXYS littelfuse-discrete-mosfets-ixf-56n30x3-datasheet?assetguid=8c909b19-ea4e-4b75-a825-453b8d56a758 Description: MOSFET N-CH 300V 56A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
auf Bestellung 4142 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.27 EUR
30+10.34 EUR
120+8.82 EUR
510+8.29 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH